mbrd820ct thru mbrd8100ct 8 amp schottky barrier rectifier 20 to 100 volts features ? plastic package has underwrit ers laboratory flammability classification 94v-0. ? metal silicon junction ,majority carrier conduction ? guard ring for overvoltage protection ? for use in low voltage ,high frequency inverters, free wheeling , and polarity protection applications ? high temperature soldering guaranteed:250 c/10 seconds, 0.25"(6.35mm)from case maximum ratings ? operating temperature: 820ct-840ct: - 65 to +125 850ct-8100ct : - 65 to +150 ? storage temperature: -65 to +150 mcc part number device marking max peak reverse voltage max rms voltage max dc blocking voltage mbrd820ct mbrd820ct 20v 14v 20v mbrd830ct mbrd830ct 30v 21v 30v mbrd840ct mbrd840ct 40v 28v 40v mbrd850ct mbrd850ct 50v 35v 50v mbrd860ct mbrd860ct 60v 42v 60v mbrd880c t MBRD880CT 80v 56v 80v mbrd8100ct mbrd8100ct 100v 70v 100v electrical characteristics @ 25 c unless otherwise specified average forwa rd current i f(av) 4a 8a per diode per device peak forward surge current i fsm 150a 8.3ms, half sine maximum forward voltage* mbrd820ct-840ct mbrd850ct-860ct MBRD880CT- 8100c t v f 0.65v 0.75v 0.85v i fm =5a max imum reverse cur rent at rated blocking voltage * mbrd820ct- 8100c t mbrd820ct-840ct mbrd850ct- 8100c t i r 1.0ma 50ma 25ma t a = 25 t a = 100 t a = 100 peak repetitive forward cu r rent i frm 20a square wave, 20 khz, t c =105 thermal re s istan ce r jc 2.5 /w ------- *pu lse test: pulse widt h 300 sec, du ty cycle 1% dimensions inches mm dim min max min max note a 0.235 0.245 5.97 6.22 b 0.205 0.215 5.21 5.46 c 0.086 0.094 2.19 2.38 d 0.025 0.035 0.64 0.89 e 0.035 0.045 0.99 1.14 f 0.250 0.265 6.35 6.73 g 0.090 2.28 j 0.018 0.023 0.48 0.58 k 0.020 --- 0.51 --- s 0.370 0.410 9.40 10.42 v 0.035 0.050 0.88 1.27 2 1 3 a s v b d g c e j k 1 2 3 f
omponents 20736 marilla street chatsworth !"# $
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mbrd820ct-mbrd8100ct 0.01 0.001 0.01 1 0.1 10 20 0.1 1 0 25 50 75 100 125 150 50 10 0 20 0406080100 110100 0.20.40.60.81.0 1.61.41.2 02040608010012 150 0 2.0 3.0 4.0 5.0 1.0 fig.1-forward current derating curve fig.2-maximum non-repetitive peak forward surge current fig.3-typical instantaneous forward characteristics fig.4-typical reverse characteristics average forward current amperes instantaneous forward current( amperes) instantaneous reverse current mill (amperes) peak forward surge current(amperes) instantaneous forward voltage (volts) reverse voltage. volts t, pulse duration ,sec. percent of rated peak reverse voltage% number of cycles at 60hz lead temperature ( c) tj=25 c tj=125 c tj=150 c pulse width=300 s 1% duty cycle tj=t jmax 8.3ms single half sine-wave (jedec method) tj=25 c resistive or inductive load 0.375" (9.5mm) lead length 1 10 0.1 0.1 0.1 0.01 1 1 10 10 100 100 100 4000 1000 100 fig.5-typical junction capacitance fig.6-typical transient thermal impedance junction capacitance(pf) transient thermal impedance, c/ w tj=25 c f=1.0mh z vsig=50mvp-p mbrd820-840 mbrd850-8100 mbrd820-840 mbrd850-8100 mbrd820-840 mbrd850-8100 mbrd820-840 mbrd850-8100 tj=75 c tj=125 c www. mccsemi .com revision: 1 2005 /09 /16 micro commercial components mcc tm
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